Realization of an artificial brain-like computer, known as “neuromorphic computation”, is a major challenge of today's electronic industry, necessary for low-power artificial intelligent applications. Mimicking neuron-like operations and incorporating them efficiently in computers requires abilities that are not easily achieved within the CMOS framework. One element is the artificial synapse, a non-volatile multi-state programmable device, able of connecting to many elements (fan-out). We present a realization of such an artificial synapse using three-terminal FET-devices based on a VO2 channel. VO2 is a correlated oxide with a temperature-driven insulator to metal transition near room temperature. In our device the insulator and metal states act as a read and write switch, accordingly. The low-temperature insulating resistance acts as the synapse state, that can be modified in a nonvolatile and reversible manner only in the high-temperature metallic state of VO2, by application of a gate voltage. We will present the properties of our artificial synapse and how, to our understanding, field induced oxygen motion is the main driving mechanism.