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A New Approach for the Incorporation of Dilute Self-Irradiating Defects in Thin Films
Tzvi Templeman [1] , Michael Schmidt [2] , Eyal Yahel [3] , Yuval Golan [1] , Itzhak Kelson [2] , Michael Shandalov [3]
[1] Department of Materials Engineering, and Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University, Beer Sheva 84105, Israel
[2] School of Physics and Astronomy, Tel-Aviv University, Tel-Aviv 84105, Israel
[3] Department of Physics, Nuclear Research Center-Negev, Beer-Sheva 84190, Israel
We present a new method to produce a model system for the study of radiation damage in non-radioactive materials.
The method is based on homogenously incorporating 228Th ions in PbS thin films using a small volume chemical bath deposition technique. Control over the thorium concentration that is present in the film can be achieved by varying the solution pH, where lower pH resulted in increased Th concentration.
The properties of the PbS(228Th) film activity were investigated by using the accompanying radioactive processes. The resulting films show promise as a model system for the analysis of dilute defect systems in semiconductor thin films.