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Signature of surface state coupling in topological Kondo insulator SmB6 thin films
P. K. Rout [1] , M. Shaviv Petrushevsky [1] , G. Levi [2] , A. Kohn [2] , Y. Dagan [1]
[1] Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
[2] Department of Materials Science and Engineering, Faculty of Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
We present the temperature dependence of the in-plane anisotropic magnetoresistance (AMR) of SmB6 thin films with varying thicknesses (t). While the AMR at high temperatures is negative due to bulk contribution, a positive AMR is observed at low temperatures. The temperature, Ts, at which this sign change occurs, decreases with increasing t and the Ts vanishes for t > 30 nm. Our results can be explained in the framework of a competition between negative bulk AMR and positive surface AMR due to inter-surface coupling.