Due to their inversion symmetry, silicon vacancy centers (SiVs) in diamond feature narrow inhomogeneous distributions, unique for solid-state systems, enabling fabrication of dense SiV ensembles with optical linewidths well below the center's ground state splitting, allowing for control via individual optical transitions. We here present stimulated Raman adiabatic passage, Raman absorption as well as four-wave mixing in a thin SiV-doped diamond lm, demonstrating strong light matter interactions and paving the way for applications such as optical quantum memories or single photon switches.