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High Performance 1550 nm Quantum Dot Semiconductor Optical Amplifiers Operating at 25-100 °C
Ori Eyal , O. Eyal , A. Willinger , V. Mikhelashvili , S. Banyoudeh , F. Schnabel , V. Sichkovsky , J. P. Reithmaier , G. Eisenstein
Eletrical Engineering Dept. Technion, Haifa 32000 Israel
Russell Berrier Nanotechnology Institute, Technion, Haifa 32000 Israel
Spectra Physics Tel Aviv, 120 Yigal Alon St. Tel-Aviv, - 67443 Israel
Technological Physics, Institute of Nanostructure Technologies and Analytics, CINSaT, University of Kassel, Kassel 34132,
We report static and dynamic properties of InAs/InP Quantum Dot optical amplifiers. High gain, distortionless amplification of 28Gbit/s signals and two-channel amplification at a detuning of 2nm with no cross talk have been demonstrated over a temperature range of 250 - 1000C.