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Influence of a strong neutron irradiation on the size and spatial distribution of Ge nanocrystals embedded in SiO2 matrix
S. Levy [1] , I. Shlimak [1] , D. H. Dressler [2] , T. Lu [3]
[1] Department of Physics, Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel
[2] Department of Chemistry, Bar-Ilan University, Ramat-Gan 52900, Israel
[3] Department of Physics and Key Laboratory for Radiation Physics & Technology of Ministry of Education, Sichuan University, Chengdu 610064, P.R.China
Samples of nanocrystalline Ge (NC-Ge) prepared by implantation of Ge+ ions into amorphous SiO2 layer on the Si <100> surface were investigated by means of Raman spectroscopy (RS) and High Resolution Transmission Electron Microscopy (HR-TEM). The obtained samples were irradiated by high dose of fast neutrons in a research nuclear reactor, followed by an annealing of radiation damage. Damages done to the crystalline structure of the nc-Ge by the irradiation is investigated. Transformation of RS and HR-TEM pictures induced by irradiation and annealing are discussed.