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Spectroscopy of barrier defects coupled to superconductors in van der Waals tunneling
T R Devidas , Tom Dvir , Itai Keren , Hadar Steinberg
The Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
Superconductor-Quantum Dot (SC-QD) coupling is a subject of an intense research effort. We report on SC-QD devices realized in Van der Waals tunneling heterostructures consisting of transition metal dichalcogenide (TMD) semiconducting barrier and the 2-band superconductor NbSe2. The QDs in our study are naturally occurring defects in the TMD barrier. As reported earlier by Dvir et. al. [1] , Andreev Bound states may form due to proximitized defects in an NbSe2-WSe2 system. Here we focus on two device structures. In the first, tunneling through an MoS2 barrier into a graphene-NbSe2 stack reveals zero-energy Kondo features which arise due to the presence of carriers associated with the NbSe2 low-energy band turning normal. In the 2nd device, defect-dot energies are tunable by use of a graphene tunneling electrode which permits the penetration of electric field from an electrostatic gate. This allows the QD to be used as spectroscopic probe to study resonant tunnelling into the superconductor, allowing low-energy spectroscopy of the inner band of NbSe2.
Reference
[1] T. Dvir, M. Aprili, C. H. L. Quay, and H. Steinberg, Phys Rev Lett 123, 217003 (2019).